Modulation performance of blue InGaN light-emitting diodes with p-type electron-blocking layer and n-type hole-blocking layer

摘要

We have fabricated two blue light-emitting diodes (LEDs) samples with p-type electron-blocking Layer and n-type hole-blocking Layer for the modulation speed measurement. The experimental results show HBL can improve the modulation speed better for blue LED. The energy bands and recombination rates of both LEDs are investigated numerically within the APSYS software. The superior speed performance of LED with HBL can be attributed to its higher electron/hole recombination rate, which is verified by the simulation.