A Novel Structure to Realize Memory Cell Fluctuation Under Voltage Control in Ising Chip

摘要

New computing architecture utilizing the noise of integrated circuit to realize indeterminate computing has been proposed previously to solve combinatorial optimization problems. But the solution accuracy of realizing indeterminate computing with circuit's noise performed significantly worse than that with external random number. Because large scale of time is spent to introduce randomness in reading memory cells by row, which reduces the effective computing time. This paper presents a novel structure to introduce probabilistic behavior with just one read operation. It improves the rate of effective computing time and can get close solution accuracy to the scheme using external random number but with less cost.