Performance of Dual Metal-Double Gate Tunnel Field Effect Transistor with Different Dielectrics

摘要

The performance of dual metal-double gate tunnel field effect transistor (DMG-DGTFET) with different dielectric gate materials is discussed. The dual metal gate technique (DMG) when applied to a DGTFET boosts the I_(ON) current and simultaneously decreases the OFF state current, which results in a substantial increase in the I_(ON)/I_(OFF) ratio. In DMG-DGTFET, gate consists of two different metals with different work function which can be used to modulate the width of tunneling barrier at the source to body junction. It is shown in this paper that by appropriately engineering the work function of the metals at the gate the good performance can be achieved for low-power design applications. All the simulations were done in 2-D TCAD. Nonlocal tunneling model is been used to calculate band-to-band tunneling (BTBT) tunneling current across the junction.