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A novel high performance design of memory architecture using modified 4T CAM cell

机译:一种使用改进的4T CAM单元的内存架构高性能设计

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In this paper, a novel modified 4T Content addressable memory (CAM) cell based Master-Slave Match Line (MSML) design for memory architectures is proposed. In memory architectures, match lines (MLs) and search lines (SLs) are main source of power consumption. The Proposed Modified 4T CAM cell based MSML design which reduces delay by 74%-95% with increases total power consumption and area compared with 4T CAM cell based MSML design.
机译:在本文中,提出了一种新型修改的4T内容可寻址存储器(CAM)基于存储器架构的主从匹配线(MSML)设计。在内存架构中,匹配线(MLS)和搜索线(SLS)是功耗的主要来源。与基于4T CAM单元的MSML设计相比,所提出的修改的4T凸轮电池基于基于74 %-95 %的MSML设计,其降低了74±%-95 %。

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