Performance Comparison of 4T, 3T and 3T1D DRAM Cell Design on 32NM Technology

摘要

In this paper average power consumption of dram cell designs have been analyzed for the nanometerscale memories. Many modern processors use dram for on chip data and programmemory. The major contributor of power in dram is the off state leakage current.Improving the power efficiency of a dram cell is critical for the improvement in average powerconsumption of the overall system. 3T dram cell, 4T dram and 3T1D DRAM cells are designedwith the schematic design technique and their average power consumption are compared usingTANNER EDA tool .average power consumption, write access time, read access time andretention time of 4T, 3T dram and 3T1D DRAM cell are simulated and compared on 32 nmtechnology.