A Novel SCE Independent Threshold Voltage Hybrid Extrapolation Extraction Method for Nano MOSFETs

摘要

Threshold voltage (V_(TH)) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise V_(TH) value of the device is described and evaluated by several estimation techniques. However these assessed values of V_(TH) diverge from the exact values due to various short channel effects (SCEs) and non-idealities present in the device. A new approach to extract the real value of V_(TH) of MOSFET is proposed in the manuscript. The subsequent novel enhanced SCE independent V_(TH) extraction method named Hybrid Extrapolation V_(TH) Extraction Method (HEEM) is elaborated, modeled and compared with few prevalent MOSFET threshold voltage extraction methods for validation of the results. All the results are verified by extensive 2-D TCAD simulation and confirmed analytically at various technology nodes.