Real-time detection of laser-GaAs interaction process

摘要

A real-time method based on laser scattering technology was used to detect the interaction process of GaAs with a 1080 nm laser. The detector collected the scattered laser beam from the GaAs wafer. The main scattering sources were back surface at first, later turn into front surface and vapor, so scattering signal contained much information of the interaction process. The surface morphologies of GaAs with different irradiation times were observed using an optical microscope to confirm occurrence of various phenomena. The proposed method is shown to be effective for the real-time detection of GaAs. By choosing a proper wavelength, the scattering technology can be promoted in detection of thicker GaAs wafer or other materials.