Ta2O5 as Tunneling Oxide for n-type Passivated c-Si CS-TOPCon Solar Cell

摘要

The Tantalum oxide (Ta2O5) as an alternating material to the SiO2 has been investigated in this. The Ta2O5 as an Anti-Reflecting coating material can also be used as the tunneling oxide material, because the electrical insulating material in the ultrathin oxide region has potential to produce extremely high electric field due to tunneling effect. The enhanced carrier transport increases the passivation quality of the designed c-Si based solar cell. It also provides the carrier selectivity because of the capacitor behavior. The performance evaluation is done with Silvaco ATLAS TCAD simulator using ASTM certified AM1.5G globally accepted spectrum. The conversion efficiency of η=28.12% is obtained for the minimum thickness of the oxide region. The performance of the designed solar cell with Ta2O5 is then compared with the basic and passivated c-Si solar cell.