Lower Fin Modulation Analysis for a Novel 5nm Top Bottom Gated Junctionless FinFET for improved performance

摘要

In this paper, lower fin modulation is performed for a Novel 5nm Top Bottom Gated Junctionless Fin shaped Field Effect Transistor (FinFET). The analysis is done for fin lengths varying from 3nm to 12nm with and without source, drain contacts present at the bottom fin and compared with the Conventional Junctionless FinFET structure. The Novel Top Bottom Gated Junctionless FinFET with 3nm Lower Fin length and contacts on bottom fin shows 197 times improvement in switching ratio as compared to the Conventional Junctionless FinFET at the same gate length. The results reveal that the device shows enhancement in terms of switching ratio and allows better gate controllability when stacked against the Conventional Junctionless FinFET for various fin lengths.