3.0 MeV proton-irradiation induced non-radiative recombination center in the GaAs middle cell and the GaInP top cell of triple-junction solar cells

摘要

3.0 MeV proton-irradiation effects on the GaAs middle cell and the GaInP top cell of n~+-p GaInP/GaAs/Ge triple-junction (3J) solar cells have been analyzed using temperature-dependent photoluminescence (PL) technique. The E5 (E_c - 0.96 eV) electron trap in the GaAs middle cell, the H2 (E_v + 0.55 eV) hole trap in the GaInP top cell are identified as the proton irradiation-induced non-radiative recombination centers, respectively, causing the performance degradation of the triple-junction solar cells. The GaAs middle cell is less resistant to proton irradiation than the GaInP top cell.