Direct bonding energy is one of the key parameter for wafer direct bonding. Since few years the impact of the water stress corrosion on the measurement has been pointed out. It has been also proven that water can diffuse into the direct bonding interface from the sample edges. This study is then based on the impact of the edge water diffusion on the direct bonding energy. A positive and a negative impact will be shown depending if the diffusion occurs before or after the bonding annealing. A mechanism will be proposed to explain these results and will mainly be based on water stress corrosion influence.
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