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Thermoelectric Properties of Highly Ordered Metal-Organic Framework Films

机译:高度有序金属 - 有机框架薄膜的热电性能

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In this work, quasi-liquid epitaxially highly oriented Surface Anchored Metal-Organic Framework (SURMOF) films and for comparison random polycrystalline MOF films loaded with tetracyano-quinodimethane (TCNQ) infiltration were fabricated and characterized. The horizontal Seebeck coefficient of the oriented SURMOF films and the random polycrystalline MOF films parallel to the sample surface was measured and has been discussed. The polycrystalline MOF films exhibit a high Seebeck coefficient of 949.9 μV/K at 290 K, while the horizontal Seebeck coefficient of oriented SURMOF films is practically around 0 μV/K. Because the quasi-epitaxial oriented SURMOF films are highly anisotropic, there is no measurable horizontal carrier transport parallel to the SURMOF surface. However in contrast to oriented SURMOF films, the electrical properties of random polycrystalline MOF films with sputtered Au contact pads could be measured. The high Seebeck coefficient of these random polycrystalline MOF films demonstrate a promising application potential of MOF films in future thermoelectric and electronic devices.
机译:在这项工作中,准液体外延高度取向的表面锚金属 - 有机骨架(SURMOF)膜和用于装载有四氰基醌二甲烷比较随机的多晶MOF膜(TCNQ)浸润制备并表征。取向膜SURMOF的水平塞贝克系数和平行于样品表面的多晶随机MOF膜进行测定,进行了讨论。多晶MOF膜表现出在290 K 949.9μV/ K的高塞贝克系数,而取向膜SURMOF的水平塞贝克系数实际上是约0μV/ K。因为准外延取向SURMOF膜是高度各向异性的,有平行于SURMOF表面没有可测量的水平载流子传输。然而在对比取向SURMOF膜,用溅射的Au接触垫随机的多晶薄膜MOF的电特性可被测量。这些随机的多晶MOF薄膜的高塞贝克系数表明在未来的热电和电子设备MOF膜的有希望的应用潜力。

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