Locally Measuring the Adhesion of InP Membranes Directly Bonded on Silicon

摘要

Instrumented nano-indentation is combined ex situ with Atomic Force Microscopy and Scanning Transmission Electron Microscopy in a nano-scale analog of the Double-Cantilever Beam experiment to evaluate the adhesion of InP membranes directly bonded on Silicon. This method is shown to provide reliable and highly localized measurements of the surface bonding energy of InP on Si. The localized nature of the measurements is taken advantage of to investigate the strength of the bonded interface on areas of the Si substrate that include nano-patterned features typically found in advanced Photonic Integrated Circuits.