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Method for manufacturing an optical transmitter by growth of structures on a thin inp buffer bonded onto a silicon based substrate

机译:通过在键合到硅基衬底上的薄inp缓冲器上生长结构来制造光发射器的方法

摘要

A method is intended for manufacturing an optical transmitter (8) comprising structures (71-76) defining together transmission means. This method comprises a first step in which an InP wafer (3) is bonded on a substrate (1) comprising silicon, then this InP wafer (3) is made thinner to become an InP buffer (4), a second step in which a dielectric mask is laid onto this InP buffer (4), then openings (6) are patterned into chosen locations of this dielectric mask, and a third step in which the structures (71-76) are grown into corresponding patterned openings (6), then remaining parts of the dielectric mask are removed.
机译:一种用于制造光发射机(8)的方法,该光发射机包括一起限定了传输装置的结构(7 1 -7 6 )。该方法包括第一步,在该第一步中,将InP晶片(3)粘结在包含硅的衬底(1)上,然后将该InP晶片(3)制成更薄的厚度,以成为InP缓冲层(4),第二步将介电掩模放在该InP缓冲区(4)上,然后将开口(6)图案化到该介电掩模的选定位置,然后进行第三步,在该步骤中将结构(7 1 -7 6 )生长到相应的图案化开口(6)中,然后去除电介质掩模的其余部分。

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