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Method for Manufacturing an Optical Transmitter by Growth of Structures on a Thin InP Buffer Bonded Onto a Silicon Based Substrate

机译:通过在键合到硅基衬底上的薄InP缓冲层上生长结构来制造光发射器的方法

摘要

A method for manufacturing an optical transmitter that includes structures (71-76) defining together transmission means. The method includes a first step in which an InP wafer (3) is bonded on a substrate (1) comprising silicon, then this InP wafer (3) is made thinner to become an InP buffer (4), a second step in which a dielectric mask is laid onto this InP buffer (4), then openings (6) are patterned into chosen locations of this dielectric mask, and a third step in which the structures (71-76) are grown into corresponding patterned openings (6), then remaining parts of the dielectric mask are removed.
机译:一种用于制造光发射器的方法,该光发射器包括一起限定传输装置的结构( 7 1 - 7 6 )。该方法包括第一步,在该步骤中,将InP晶片( 3 )粘结在包含硅的衬底( 1 )上,然后将该InP晶片( 3 )变薄,使其成为InP缓冲区( 4 ),第二步是将电介质掩模放在该InP缓冲区( 4 )上,然后打开( 6 )被构图成该介电掩模的选定位置,第三步是将结构( 7 1 - 7 < / B> 6 )生长到相应的图案化开口( 6 )中,然后去除介电掩模的其余部分。

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