Growth and Etch Forms of Germanium Microcrystals on a Silicon Oxide Substrate

摘要

We have studied how the forms of germanium microcrystals evolve during thermal growth and etch processes in a reactive gas ambient. Microcrystals of germanium formed by chemical vapor deposition on thermally grown silicon oxide were examined before and after further processing to determine how particular crystal faces developed or receded and how other surface features evolved. The observed behavior is interpreted in terms of orientation-dependent kinetics and surface free energy.