Oxidizing species dependence of the interface reaction during atomic-layer-deposition process and post-deposition-anneal

摘要

The influence of the post deposition anneal (PDA) to the Al_2O_3 film quality was investigated. In the case of PDA using Ar/O_2 plasma, the Al_2O_3/substrate interface quality was degraded because the oxidation at Al_2O_3/substrate interface proceeds. In the case of PDA using H_2O, the gate leakage current can be decreased. However, H_2O annealing induced the voltage dependence of capacitance due to increase the traps in the Al_2O_3 film. It is considered that the H_2O annealing is effective to reduce the gate leakage current and fixed charges in the Al_2O_3 film but is induced to increase the traps in the film.