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Fabrication and Characterization of Antibacterial Tantalum Oxide Thin Films Deposited by Reactive Magnetron Sputtering

机译:反应磁控溅射沉积的抗菌钽氧化物薄膜的制备与表征

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Tantalum oxide (TaO) thin films were deposited by dc reactive magnetron sputtering at room temperature. A target of tantalum (99.995%) and a mixture of argon and oxygen gases were used to deposit TaO films on to silicon wafers (100) and BK7 glass substrate. The effects of annealing temperature (300-700 °C) on structural, morphology and anti-bacterial properties were investigated. Grazing incident X-ray diffraction (GIXRD), atomic force microscope (AFM) measurements are carried out to identify the crystalline structure, film morphology and surface roughness, respectively. The antibacterial behavior of the tantalum oxide thin films will be discussed in this paper.
机译:在室温下通过DC反应磁控溅射沉积钽氧化物(TAO)薄膜。使用钽(99.995%)的靶标和氩气和氧气的混合物,将Tao薄膜沉积在硅晶片(100)和BK7玻璃基板上。研究了退火温度(300-700℃)对结构,形态和抗细菌性能的影响。采用入射入射X射线衍射(GixRD),进行原子力显微镜(AFM)测量,以分别识别晶体结构,薄膜形态和表面粗糙度。本文将讨论氧化钽薄膜的抗菌性能。

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