Effect of Annealing Temperature on NiO/ZnO Heterojunction Thin Films Prepared by Sol-gel Method

摘要

In this research, NiO/ZnO heterojunction thin films were fabricated on a ITO substrate by sol-gel technique. The as-prepared thin films were annealed at various temperatures. The effect of annealing temperature on structural, surface morphology and electrical properties of thin films was investigated by XRD, FESEM and I-V characteristic measurement. The XRD results revealed that NiO/ZnO thin film was polycrystalline and exhibited better crystallization when annealing temperature was increased. The current-voltage curve of all sample exhibited the diode behaviour.