A Pattern- and Optics-Independent Compact Model of Mask3D under Off-Axis Illumination with Significant Efficiency and Accuracy Improvements

摘要

As the critical dimension keeps shrinking, mask topography effect (Mask3D) becomes considerable to impact the lithography modeling accuracy and the quality of full-chip OPC. Among many challenges in Mask3D modeling, it is critical and particularly demanding to treat off-axis illumination (OAI) properly. In this paper, we present a novel Mask3D model that is completely test pattern- and optics- independent. Such model property enables greatly improved performance in terms of accuracy and consistency on various pattern types (1D/2D) and through a wide range of focus conditions, while no runtime overhead is incurred. The novel model and formulation will be able to save significant modeling time and greatly improve the model reliability, predictability and ease of use. Experimental results validate the claims and demonstrate the superiority to the current state-of-the-art Mask3D modeling method. This is a new generation Mask3D modeling process.