MASK3D MODEL ACCURACY ENHANCEMENT FOR SMALL FEATURE COUPLING EFFECT

摘要

A method and apparatus of a novel full chip edge-based mask three-dimensional (3D) model for performing photolithography simulation with consideration for edge coupling effect is described. The method receives a mask design layout in order to perform mask topography effect modeling. The method generates scaling parameters for edge coupling effects. Each scaling parameter has an associated combination of feature width and space. The sum of feature width and space associated with at least one scaling parameter is less than a minimum pitch. The method applies a thick mask model that includes several edge-based kernels to the mask design layout to create a mask 3D residual. To apply the thick mask model to the mask design layout, the method updates the edge-based kernels with the scaling parameters.