Fabrication and Characterization of p-Si/n-ZnO Heterojunction Ultraviolet Photodetector

摘要

This work deals with the fabrication and characterization of ultraviolet (UV) photodetectors (PDs) based on Si(p)/ZnO(n) heterojunction diodes. Zinc oxide films were grown by metal-organic chemical vapor deposition technique at a growth temperature of 450 °C. The non-stoichiometric nature with oxygen vacancy implies the n-type conductivity of as-grown ZnO. The optical bandgap was found to be 3.37 eV which was direct in nature. The ideality factor of the diode was calculated as 3.57. At a reverse bias of 3V the detector showed an on/off ratio of 16. The rise and decay time of transient response were 242 ms and 354 ms, respectively.