Double-wavelength sensitive AlGaN/GaN MISIM UV sensor using multi-layer graphene as Schottky electrodes

摘要

We proposed and fabricated an AlGaN/GaN hetero-structure layer-based metal-insulator-semiconductor-insulator-metal type UV sensor by using five stacks of multi-layer graphene. It showed two clear cut-off wavelengths at 330 and 365 nm. Compared with that of Ni electrode, it showed very low leakage current and high photo-responsivity.