The Silicon Plates In Buried Oxide For Enhancement Of The Breakdown Voltage In SOI MESFET

摘要

This paper introduces a novel SOI MESFET which enhancement breakdown voltage (VBR) by modifying electric field distribution. To achieve high enhancement of the VBR utilized three Silicon plates in buried oxide of the silicon on insulator metal semiconductor field effect transistor (SOI MESFET). This change in the SOI MESFET structure leads to controlled electric field distribution, increase VBR and Output Resistance (RO). The numerical simulation results show that the VBR of the Silicon Plates SOI MESFET (SP-SOI MESFET) structure improves by 50% compared with that of the conventional SOI MESFET (C-SOI MESFET) structure. As a result, the SP-SOI MESFET structure has superior electrical performances in comparison with the conventional structure.