BREAKDOWN VOLTAGE EVALUATION METHOD FOR BURIED OXIDE FILM OF SOI SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a breakdown voltage evaluation method for a buried oxide film of an SOI substrate for avoiding self-healing and accurately evaluating the quality of the buried oxide film of the SOI substrate. ;SOLUTION: The SOI layer is removed in advance, an electrode X and the like of at least 400 nm is formed on the removal surface of the SOI layer of an exposed buried oxide film Wa, and a MOS capacitor having the electrode X and the like, buried oxide film Wa, and a wafer Wb for supporting the substrates is manufactured. As a result, when the oxide film breakdown voltage of the buried oxide film Wa is evaluated even if the thickness of the SOI layer is not more than 50 nm, the self-healing cannot easily occur due to heat generated by voltage stress to the MOS, thus accurately evaluating the oxide film breakdown voltage in the buried oxide film Wa.;COPYRIGHT: (C)2004,JPO