Fabrication and characterization of perovskite-based CH_3NH_3Pb_(1-x)Ge_xI_3, CH_3NH_3Pb_(1-x)Tl_xI_3 and CH_3NH_3Pb_(1-x)In_xI_3 photovoltaic devices

摘要

Perovskite-type CH_3NH_3PbI_3-based photovoltaic devices were fabricated and characterized. Doping effects of thallium (Tl), indium (In), or germanium (Ge) element on the photovoltaic properties and surface structures of the perovskite phase were investigated. The open circuit voltage increased by Ge addition, and fill factors were improved by adding a small amount of Ge, Tl or In. In addition, the wavelength range of incident photon conversion efficiencies was expanded by the Tl addition.