Hydrogen And Temperature Dependence Of D.C. Pulsed Magnetron Sputtered Amorphous Silicon

摘要

Films of amorphous hydrogenated silicon were prepared using d.c. pulsed magnetron sputtering onto unheated substrates and substrates at elevated temperatures. In order to control the hydrogenation an additional gas flow of hydrogen was introduced during sputtering. The hydrogen incorporation is discussed on results of Fourier transformed infrared spectroscopy and variable angle spectroscopic ellipsometry. The relationship between the band gap and hydrogen content is evaluated and the applicability of the tetrahedron model for the samples is discussed.