Hydrogenated Amorphous Silicon Deposited By Pulsed Dc Magnetron Sputtering. Deposition Temperature Effect

摘要

In this work, we studied the effect of deposition temperature on the characteristics of silicon thin films deposited by pulsed DC magnetron sputtering. This pulse consists of a successive fine layers (about 25 to 30 nm) deposition separated by a relaxation time. This last is ensured by the injection of a high quantity of hydrogen without stopping plasma. When we increase the temperature of deposition (from 200 ℃ to 550 ℃); some characteristics of the material show variations similar to the results met in the literature. We thus obtain a diminution in the optical gap (from 2.00 eV to 1.66 eV) and a reduction in the hydrogen relative concentration (from 30% to 5%). Otherwise, in the range of deposition temperature between 300 ℃and 400 ℃, the microstructural parameter "R_(2090)". the dark conductivity "σ_(obs)" and its activation energy "Ea" present a particular evolution. In addition, the samples Raman shift spectra shows that the material deposited at 350 ℃ presents, in its structure, a microcrystalline phase in addition to the amorphous one.