Formation of vertically stacked germanium-tin (Geinf1amp;#x2212;x/infSninfx/inf) nanowires using a selective dry etch technique

摘要

Vertically stacked (×3 wires stacked) Ge0.92Sn0.08 NWs were realized for the first time. This structure could be used for the fabrication of high performance Ge1−xSnx GAANW MOSFETs.