Simulation of Electron Tunnel Current through HfO2/SiO2 Nanometer-thick Layers with a Trapped Charge of a MOS Capacitor Using a Transfer-Matrix Method

摘要

The electron transmittance and tunneling current in n~+poly Si/HfO2/SiO2/Si(100) capacitors with an electron trap created at the interface between HfO2 and SiO2 layer have been calculated by using a transfer-matrix method. The electron motion was considered not only in a longitudinal direction but also in a transversal direction. The trap was modeled as a quantum well. It has been found that as the trap becomes deeper and wider, the transmittance and tunneling current get higher. It has also been found that the quantum well is able to generate a resonant tunneling and this resonant tunneling will result in an oscillatory behavior in the tunneling current.