The influence of O_2/Ar on the dielectric properties of bismuth zinc niobate titanium thin films prepared by RF magnetron sputtering

摘要

BZNT (Bi_(1.5)Zn_(0.5)Nb_(0.5)Ti_(1.5)O_7) thin films were prepared on Pt/Ti/SiO_2/Si substrates by radio frequency (RF) magnetron sputtering in different O_2/Ar ranging from 4:16 to 7:13. The structure and surface morphology of BZNT thin films were investigated by x-ray diffraction (XRD) and atom force microscopy (AFM). The analysis of component in BZNT films were carried out by x-ray photoelectron spectroscopy (XPS). The dielectric measurements were conducted on metal-insulator-metal capacitors at the frequency from 100 Hz to 1M Hz. It's found that the O_2/Ar ratios significantly influence the elements content in BZNT thin films and the morphology and dielectric properties of BZNT thin films. At 1M Hz, the dielectric constant of BZNT thin films deposited at O_2/Ar ranging from 4:16 to 7:13 is 212, 187, 171, 196, respectively. The BZNT thin film prepared at O_2/Ar = 6:14 shows the highest figure of merit for its very low dielectric loss of 0.0024.