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Electrical Characteristic of UV Sensor using Nanostructured Al Doped ZnO Thin Film

机译:UV传感器的电气特性使用纳米结构Al掺杂ZnO薄膜

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摘要

The electrical properties of nanostructured Aluminum (Al) doped Zinc Oxide (ZnO) thin films based ultraviolet (UV) sensor prepared by sol-gel spin-coating method have been investigated. Uniform nanoparticles Al doped ZnO have been deposited with high absorption coefficient at UV region and low absorption coefficient properties in visible and near-infrared (NIR) region. I-V spectra show high sensitivity characteristic of UV sensor with fast response after UV light exposure.
机译:研究了通过溶胶 - 凝胶旋涂法制备的纳米结构铝(Al)掺杂氧化锌(ZnO)薄膜的紫外线(UV)传感器的电性能。均匀的纳米颗粒Al掺杂的ZnO已经沉积在UV区域的高吸收系数和可见和近红外(NIR)区域中的低吸收系数。 I-V光谱显示UV传感器的高灵敏度特性,在紫外线曝光后快速响应。

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