Compact Negative Bias Temperature Instability Model for Nanoscale FinFET Reliability Simulation

摘要

A compact Negative Bias Temperature Instability (NBTI) model, which is based on a novel Reaction-Trapping (R-T) theory, is proposed to predict the static and dynamic NBTI degradation in nanoscale FinFET reliability simulation. This R-T theory is on the basis of the hypothesis that threshold voltage variation is induced by H atoms captured by either shallow or deep level traps in the gate oxide. The advantage of the novel NBTI model is demonstrated by comparing with the classical Reaction-Diffusion NBTI model. A good match between the proposed NBTI model and the experimental results is obtained in terms of the temperature dependence and the structure effect of nanoscale FinFETs.