Packaging technology applicable to SiC power devices operated in an extended junction temperature range (Tjmax ＞ 200°C) must be developed in order to create much more compact and cost-effective SiC power modules. This paper describes some of the technical challenges involved in improving the reliability of the critical package components-die attachment system, Al wire bonds and encapsulation-in direct contact with SiC devices inside the power module. Two numerical targets, (Ⅰ) 3000 hours for a storage test at 250°C and (Ⅱ) 3000 cycles for thermal cycling between -40°C and 250°C, were achieved through optimization and various improvements.
展开▼
