Atomic Layer Deposition of Ultra-Thin Oxide Semiconductors: Challenges and Opportunities

摘要

Atomic Layer Deposition (ALD) is an enabling technology which provides coating and material features with significant advantages compared to other existing techniques for depositing precise ultra-thin two-dimensional (2D) nanostructures. ALD provides digital thickness control to the atomic level by depositing film one atomic layer at a time, as well as pinhole-free films even across large and complex areas. The technique's capabilities are presented on the example of ALD-developed ultra-thin 2D tungsten oxide (WO_3) over the large area of standard 4" Si substrates. The discussed advantages of ALD enable and endorse the employment of this technique for the development of hetero-nanostructure 2D semiconductors with unique properties.