Scallion-root-shaped GaN nanorods grown by two-step method and study on their properties

摘要

Two-step growth technology to successfully synthesize scallion-root-shaped GaN nanorods was presented in this paper. This growth method is applicable to continuous synthesis a large number of single-crystalline GaN nanorods with a high purity at a low cost. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) are employed to characterize the structure, composition and morphology of as-grown GaN nanorods. The results show that the obtained nanorods are single-crystal GaN with hexagonal wurtzite structure and have a relatively high purity. The diameter of the nanorods is about 500 nm with length up to several tens of micrometers. The representative photoluminescence spectra (PL) measured at room temperature exhibited a strong and broad emission peak at 388 nm corresponding to the strong-band-emission in wurtzite GaN, indicating that the nanorods have a good emission property. The growth mechanism is also briefly discussed.