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Efficiency Improvement of a-Si:H/μc-Si:H Tandem Solar Cells by Adding a-SiOx:H Layer between Ag Nano Particles and the Active Layer

机译:A-Si:H /μC-Si:H串联太阳能电池通过在Ag纳米粒子和有源层之间添加A-SiOx:H层的效率改进

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In this article, we investigated the positive effect of a-SiOx:H layer between Ag surface plasmon polaritons and the active layer of a thin film a-Si:H/μc-Si:H tandem solar cell by isolating the metal nano particles that are responsible of creating surface recombination centres on the top cell. We fabricated four identical a-Si:H/μc-Si:H tandem cells having different thickness of a-SiOx:H layer like 0, 10, 20 and 30 nm just before the Ag nano particle development, and measured J-V characteristics of each to find out an optimum a-SiOx:H insulating layer thickness. We showed that the overall efficiency of a tandem cell with Ag nano particles could be improved up to 8.65% compared with the one having no a-SiOx:H layer. The most promising layer thickness for a small area tandem cell was obtained around 20 nm with an overall efficiency of 16.19%. An improvement of 14.6% in short circuit current density (JSC) and 2.64% in open circuit voltage (Voc) was achieved.
机译:在本文中,我们通过隔离金属纳米颗粒,研究了AG表面等离子体极性恒星和薄膜A-Si:H串联太阳能电池之间的Ag表面等离子体极化膜和薄膜A-Si:H串联太阳能电池之间的A-SiOx:H层的正效应负责在顶部细胞上产生表面重组中心。我们制造了四种相同的A-Si:H串联细胞,其具有不同厚度的A-SiOx:H层,如0,10,20和30nm,恰好在Ag纳米颗粒发育之前,测得每个JV特征找出最佳A-SiOx:H绝缘层厚度。我们表明,与没有A-SiOx:H层的串联颗粒的串联粒细胞的整体效率可提高至8.65%。为小区串联电池的最有前景的层厚度约为20nm,整体效率为16.19%。实现了短路电流密度(JSC)的提高14.6%,在开路电压(VOC)中实现了2.64%。

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