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The effect of spin-orbit coupling on the electronic structures and half-metallicity of Heusler compounds: V_2ReZ (Z=Al, Ga, In)

机译:旋转轨道耦合对Heusler化合物的电子结构和半金属结构的影响:V_2REZ(Z = Al,Ga,In)

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We have studied the influence of spin-orbit coupling (SOC) on the electronic structures and half-metallicity for the V_2ReZ (Z=Al, Ga, In) compounds. It was found that the SOC has a slight influence on the whole configuration of the electronic structure and the degenerated states were split into several singlet states at the high-symmetry points. The e_g and t_(1u) states near the Fermi level are not sensitive to the SOC. The t_(2g) states composed of the side of half-metallic gap are sensitive to the SOC. The dispersivity of t_(2g) states was strongly reduced, which lead to an increase of the valence electron effective mass and the width of half-metallic gap. The SOC can slightly increase the spin splitting of Re and V(B) atoms. The Z atom has an influence on the intensity of SOC to act on half-metallic gap.
机译:我们已经研究了旋转轨道耦合(SOC)对V_2REZ(Z = Al,Ga,In)化合物的电子结构和半金属性的影响。发现SOC对电子结构的整个配置有轻微影响,并且将退化状态分成高对称点处的几个单线状态。 FERMI水平附近的E_G和T_(1U)状态对SOC不敏感。由半金属间隙侧组成的T_(2G)状态对SoC敏感。 T_(2G)状态的分散性强烈降低,这导致了价值电子有效质量和半金属间隙宽度的增加。 SOC可以稍微增加RE和V(B)原子的旋转分裂。 Z原子对SoC的强度产生影响,以采用半金属间隙。

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