Bifacial screen-printed n-type passivated emitter rear totally diffused rear junction solar cells

摘要

We present the n-type passivated emitter rear totally diffused (n-PERT) rear junction (RJ) silicon solar cell concept as an industrially viable and cost effective alternative to passivated emitter and rear cells (PERC). In this work, we focus on a bifacial version of the cell type, featuring an H-pattern grid design on the rear side, and investigate the dependence of cell parameters on base doping concentration. With the software Quokka3, we performed a series of simulations to understand the cells electrical performance and its bifacial behavior. We varied front and rear side finger pitch, rear side irradiance, bulk minority-carrier lifetime (τ_b) and base resistivity (ρ_b). We measured the bifacial power generation of our best cell according to the equivalent irradiance method (G_E) and compared it with the simulations.