Fabrication and electroluminescence of n-ZnO nanorods/p-Si nanowires heterostructured light-emitting diodes

摘要

The n-ZnO nanorods/p-Si nanowires heterojunction was fabricated by chemical method. The microstructure of the epitaxially grown ZnO nanorod was characterized by scanning electron microscopy, X-ray diffraction and transmission electron microscopy. The photoluminescence of the nanostructure showed a typical UV emission band and a defect-related emission band. Further, the electroluminescence of the nanostructure were measured, and the mechanism was discussed based on the band diagram of the n-ZnO nanorods/p-Si nanowires heteroj unction.