Ion-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodes

摘要

We have demonstrated rare earths (REs) doped ZnO-based heterojunction light-emitting diodes (LEDs) on p-Si substrates by ultrasonic spray pyrolisis (USP). Room-temperature electroluminescence was clearly observed from reverse-biased n-ZnO:REs/p-Si diodes, which red and blue color emissions were realized from Eu and Tm ions, respectively. The narrow line-width emissions are attributed to the transitions within the shielded 4f levels of the trivalent REs ions that resulting from direct electron impact excitation during reverse bias. (C) 2014 Elsevier Ltd. All rights reserved.