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Nanoscale ZnO window layer textured 650nm resonant cavity light emitting diode

机译:纳米级ZnO窗口层纹理的650nm谐振腔光二极管

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We propose a simple technique to improve the light extraction efficiency of 650nm AlGaInP/GaInP resonant cavity light emitting diodes (RCLEDs) by using nanoscale textured-ZnO window layer. This layer was performed using a hydrothermal synthesis method, and the treatment solution for ZnO texturing growth on the RCLED surface was investigated. In addition, it has also been found that the optimum roughness of the nanoscale ZnO texturing for enhancing the light efficiency is about 300nm. As compared with the conventional RCLED, the nanoscale ZnO-textured RCLED, which has the optimum average roughness of 300nm, performs higher external quantum efficiency, a higher light output power, and a narrower spectrum width.
机译:我们提出了一种简单的技术,通过使用纳米尺度纹理 - ZnO窗口层提高650nmAlAlP / GainP谐振腔光发光二极管(rcleds)的光提取效率。使用水热合成方法进行该层,研究了ZnO纹理生长在旋转表面上的处理溶液。另外,还发现,用于增强光效率的纳米级ZnO纹理的最佳粗糙度为约300nm。与传统的RCLED相比,具有300nm的最佳平均粗糙度的纳米级ZnO纹理RCLED执行更高的外部量子效率,更高的光输出功率和较窄的频谱宽度。

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