首页> 外文会议>ICCMME 2012 >Preparation of La_(0.9)Sr_(0.1)Ga_(0.8)Mg_(0.2)O_(3-δ) electrolyte films deposited by RF magnetic sputtering
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Preparation of La_(0.9)Sr_(0.1)Ga_(0.8)Mg_(0.2)O_(3-δ) electrolyte films deposited by RF magnetic sputtering

机译:由RF磁溅射沉积的La_(0.9)Sr_(0.1)Ga_(0.8)Mg_(0.2)Mg_(0.2)O_(3-δ)电解质膜的制备

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La_(0.9)Sr_(0.1)Ga_(0.8)Mg_(0.2)O_(3-δ) (LSGM) electrolyte materials were synthesized using solid state reactions. The LSGM material film was deposited by radiofrequency magnetic sputtering on La_(0.7)Sr_(0.3)Cr_(0.5)Mn_(0.5)O_(3-δ) (LSCM) substrates. The analysis results show the films did not form but formed some “mountains” when deposited for 4 h. While the depositing time extended to 12 h, a dense and uniform film with perovskite phase was obtained, and the element amounts of the film were closed to those of the LSGM materials.
机译:使用固态反应合成La_(0.9)Sr_(0.1)Ga_(0.1)Mg_(0.2)o_(3-δ)电解质材料。通过LA_(0.7)SR_(0.3)CR_(0.5)MN_(0.5)O_(3-Δ)(LSCM)基板上的射频磁溅射沉积LSGM材料膜。分析结果表明,在沉积4小时时,薄膜没有形成但形成了一些“山脉”。虽然延长至12小时的沉积时间,得到浓密和均匀的膜,膜具有钙钛矿相,并且将薄膜的元素量与LSGM材料的那些封闭。

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