InAsSb single crystals and photoconductors with cutoff wavelengths longer than 8 μm

摘要

High sensitivity uncooled InAsSb photoconductors with cutoff wavelengths longer than 8 μm were experimentally validated. The detectors were fabricated using InAs_(0.052)Sb_(0.948) and InAs_(0.023)Sb_(0.977) single crystals grown on InAs substrates by melt epitaxy (ME). The thickness of the epilayers was 50 μm. Ge optical lenses were set on the photoconductors. At room temperature, the photoresponse wavelength range was 2-10 μm. Peak detectivity D_(λp) (6.5 μm, 1200 Hz) reached 5.4 × 10~9 cm Hz~(1/2) W~(-1) for InAs_(0.052)Sb_(0.948) immersed detectors. The detectivity D was 9.3 × 10~8 and 1.3 × 10~8 cm Hz~(1/2) W~(-1) at the wavelength of 8 and 9 μm respectively. The good performances of InAsSb detectors indicate the possible detection applications.