Optical Properties of InAsSb Single Crystals with Cutoff Wavelengths of 8-12μm Grown by Melt-Epitaxy

摘要

The transmittance spectra of melt epitaxiy (ME)-grown InAsSb single crystals with cutoff wavelengths of 8-12 μm were measured and calculated under the assumption of a microscopic composition distribution function. A good agreement between the experimental and theoretical transmittance spectra was obtained. The results indicate that a microscopic composition distribution inhomogeneity exists in long-wavelength InAsSb epilayers with different compositions, which may be related to the energy band gap narrowing of this InAsSb.