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Ferromagnetism in N-doped In_2O_3 films prepared by thermal oxidation

机译:通过热氧化制备的N-掺杂IN_2O_3薄膜中的铁磁性

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Two series of N-doped In_2O_3 films were prepared by annealing the sputtered InN films in air at different temperatures and for different time. The corresponding structural and magnetic properties are studied. An apparent transformation from the wurtzite InN to the cubic bixbyite In_2O_3 is observed with increasing the annealing temperature. Room temperature d~0 ferromagnetism is detected, which is found to be closely related with the annealing conditions. We think that the ferromagnetism is derived from the N-doping which substitute the positions of the oxygen atoms in the In_2O_3 lattice, and an indirect ferromagnetic coupling can be established between the doped N atoms via the hybridized O 2p and In 5p/4d orbitals.
机译:通过在不同温度和不同时间的空气中退火溅射的INN薄膜来制备两种N掺杂的IN_2O_3薄膜。 研究了相应的结构和磁性。 随着退火温度的增加,观察到从普氏石英徒点到立方BixByite的明显变换。 检测到室温D〜0铁磁性,发现与退火条件密切相关。 我们认为铁磁性来自替代IN_2O_3晶格中的氧原子的位置的N-掺杂,并且可以通过杂交的o 2p和5p / 4d轨道在掺杂的n原子之间建立间接铁磁性偶联。

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