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Structural and electrical properties of zinc oxides thin films prepared by thermal oxidation

机译:通过热氧化制备的氧化锌薄膜的结构和电学性质

摘要

We report on zinc oxide (ZnO) thin films (d = 55–120 nm) prepared by thermal oxidation, at 623 K, of metallic zinc films, using a flash-heating method. Zinc films were deposited in vacuum by quasi-closed volume technique onto unheated glass substrates in two arrangements: horizontal and vertical positions relative to incident vapour. Depending on the preparation conditions, both quasi-amorphous and (0 0 2) textured polycrystalline ZnO films were obtained. The surface morphologies were characterized by atomic force microscopy and scanning electron microscopy. By in situ electrical measurements during two heating–cooling cycles up to a temperature of 673 K, an irreversible decrease of electrical conductivity of as flash-oxidized Zn films was revealed. The influence of deposition arrangement and oxidation conditions on the structural, morphological and electrical properties of the ZnO films is discussed.
机译:我们报告了通过闪蒸方法在623 K下对金属锌膜进行热氧化而制备的氧化锌(ZnO)薄膜(d = 55-120 nm)。锌膜通过准封闭体积技术在真空中沉积在未加热的玻璃基板上,沉积方式有两种:相对于入射蒸汽的水平和垂直位置。根据制备条件,获得了准非晶和(0 0 2)织构的多晶ZnO薄膜。表面形貌通过原子力显微镜和扫描电子显微镜表征。通过在两个加热至冷却循环中(最高温度为673 K)的原位电学测量,发现快速氧化的Zn薄膜的电导率不可逆地降低。讨论了沉积排列和氧化条件对ZnO薄膜的结构,形态和电学性质的影响。

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