SiC MOS Interface States: Similarity and Dissimilarity from Silicon

摘要

We here discuss SiC MOS interface states based mainly on microscopic information given by electron spin resonance (ESR) spectroscopy. Despite structural similarities between Si-SiO_2 and SiC-SiO_2, SiC MOS interfaces exhibit some dissimilarities from Si MOS ones. One example is the presence of carbon-related defects at there. Reactions to hydrogen and nitrogen atoms are also quite different between the two interfaces. We present recent our findings on the behaviors of these atoms at SiC MOS interfaces.