Growth of Heavily Indium doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium

摘要

Czochralski growth of Si crystals heavily doped with In impurity and co-doped with electrically neutral impurity C or Ge was conducted in order to investigate the solubility and ionization ratio of In in Si for utilizing in advanced ULSI and PV devices. The carrier concentrations in the grown In-doped and (In+C) and (In+Ge) co-doped crystals were in a range of 3.5~6.5 × 10~(16) cm~(-3), much lower than the total concentration of In impurity due to the low ionization ratio. Sufficient increase of carrier concentrations by co-doping of C or Ge impurity was not detected for their low concentrations in the grown crystals investigated.