机译:锗共掺杂对重硼掺杂直拉硅中氧沉淀的影响
State Key Laboratory of Silicon Materials and Department of Material Science and Engineering, Zhejiang University, Hangzhou 310027, China;
State Key Laboratory of Silicon Materials and Department of Material Science and Engineering, Zhejiang University, Hangzhou 310027, China;
State Key Laboratory of Silicon Materials and Department of Material Science and Engineering, Zhejiang University, Hangzhou 310027, China;
State Key Laboratory of Silicon Materials and Department of Material Science and Engineering, Zhejiang University, Hangzhou 310027, China;
State Key Laboratory of Silicon Materials and Department of Material Science and Engineering, Zhejiang University, Hangzhou 310027, China;
Germanium; Co-doping; Boron doped; Oxygen precipitation; RTP;
机译:氮共掺杂对重掺杂磷的直拉硅高温退火过程中氧沉淀的增强作用
机译:快速热处理对重砷和锑掺杂的切克劳斯基硅中氧沉淀的影响
机译:外延层重掺砷或掺硼的切克劳斯基硅片中的高温间隙氧扩散延迟
机译:常规和氮的氧气沉淀有助于掺杂的砷掺杂的Czochralski硅晶体:奥斯旺德成熟
机译:切克劳斯基硅中氧沉淀的模型。
机译:重掺杂硼的硅层用于纳米级热电器件的制造
机译:快速热处理对重型砷和锑的氧气沉淀的影响掺杂Czochralski硅